SI7111EDN www.vishay.com vishay siliconix s16-1520-rev. a, 01-aug-16 1 document number: 67807 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 p-channel 30 v (d-s) mosfet features ? trenchfet ? gen iii p-channel power mosfet ?r ds(on) rating at v gs = -2.5 v ? 100 % r g and uis tested ? typical esd protection: 4600 v hbm ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? battery switch ? adapter and charger switch ?load switch ? battery management in mobile devices notes a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( www.vishay.com/doc?73257 ). the powerpak 1212-8 is a lead less package. the end of th e lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequa te bottom side sold er interconnection. e. rework conditions: manual soldering with a solderin g iron is not recommended for leadless components. f. maximum under steady stat e conditions is 81 c/w. g. t c = 25 c. product summary v ds (v) -30 r ds(on) max. ( ? ) at v gs = -4.5 v 0.00855 r ds(on) max. ( ? ) at v gs = -2.5 v 0.01600 q g typ. (nc) 30.5 i d (a) 60 a, g configuration single powerpak ? 1212-8 s ingle top view 1 3.3 mm 3.3 mm bottom view 1 s s s 3 s 4 g d 8 d 7 d 6 d 5 p-channel mo s fet s d g ordering information package powerpak 1212-8 lead (pb)-free and halo gen-free SI7111EDN-t1-ge3 absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -30 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) t c = 25 c i d 60 a a t c = 70 c 49.3 t a = 25 c 17.4 a, b t a = 70 c 13.9 a, b pulsed drain current (t = 100 s) i dm 150 continuous source-drain diode current t c = 25 c i s 47.3 t a = 25 c 3.7 a, b single pulse avalanche current l = 0.1 mh i as 20 single pulse avalanche energy e as 20 mj maximum power dissipation t c = 25 c p d 52 w t c = 70 c 33.3 t a = 25 c 4.1 a, b t a = 70 c 2.6 a, b operating junction and storage temperature range t j , t stg -55 to +150 c soldering recommendations (peak temperature) c 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t ? xx s r thja 23 30 c/w maximum junction-to-case (drain) steady state r thjf 1.9 2.4
SI7111EDN www.vishay.com vishay siliconix s16-1520-rev. a, 01-aug-16 2 document number: 67807 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not su bject to production testing. ? stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = -250 a -30 - - v v ds temperature coefficient ? v ds /t j i d = -250 a --24- mv/c v gs(th) temperature coefficient ? v gs(th) /t j -3.4- gate-source threshold voltage v gs(th) v ds = v gs , i d = -250 a -0.6 - -1.6 v gate-source leakage i gss v ds = 0 v, v gs = 12 v - 0.70 10 a v ds = 0 v, v gs = 4.5 v - 0.06 1 zero gate voltage drain current i dss v ds = -30 v, v gs = 0 v - - 1 a v ds = -30 v, v gs = 0 v, t j = 70 c - - 10 on-state drain current a i d(on) v ds ? -10 v, v gs = -4.5 v -30 - - a drain-source on-state resistance a r ds(on) v gs = -4.5 v, i d = -15 a - 0.00720 0.00855 ? v gs = -2.5 v, i d = -10 a - 0.01310 0.01600 forward transconductance a g fs v ds = -15 v, i d = -15 a - 64 - s dynamic b input capacitance c iss v ds = -15 v, v gs = 0 v, f = 1 mhz - 5860 - pf output capacitance c oss - 412 - reverse transfer capacitance c rss - 395 - c rss /c iss ratio - 0.068 - total gate charge q g v ds = -15 v, v gs = -4.5 v, i d = -10 a - 56.5 85 nc v ds = -15 v, v gs = -2.5 v, i d = -10 a - 30.5 46 gate-source charge q gs -9.6- gate-drain charge q gd - 13.6 - gate resistance r g f = 1 mhz 0.7 3 5.5 ? turn-on delay time t d(on) v dd = -15 v, r l = 1.5 ? , i d ? -10 a, v gen = -4.5 v, r g = 1 ? -2550 ns rise time t r -4080 turn-off delay time t d(off) - 120 240 fall time t f -3366 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - - 47.3 a pulse diode forward current i sm - - 150 body diode voltage v sd i s = -5 a, v gs = 0 v - -0.75 -1.1 v body diode reverse recovery time t rr i f = -10 a, di/dt = 100 a/s, t j = 25 c -3264ns body diode reverse recovery charge q rr -3060nc reverse recovery fall time t a -16- ns reverse recovery rise time t b -16-
SI7111EDN www.vishay.com vishay siliconix s16-1520-rev. a, 01-aug-16 3 document number: 67807 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) gate-current vs. gate-source volta g e output characteristics on-resistance vs. drain current and gate volta g e gate-current vs. gate-source volta g e transfer characteristics capacitance 10 100 1000 10000 0.000 0.001 0.002 0.003 0.004 0.005 0 4 8 12 16 20 axis title 1st line 2nd line 2nd line i gss - gate current (a) v gs - gate-to-source voltage (v) 2nd line t j = 25 c 10 100 1000 10000 0 30 60 90 120 150 012345 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) 2nd line v gs = 5 v thru 3 v v gs = 1.5 v v gs = 2 v v gs = 2.5 v v gs = 1 v 10 100 1000 10000 0 0.005 0.010 0.015 0.020 0.025 0 1224364860 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () i d - drain current (a) 2nd line v gs = 2.5 v v gs = 4.5 v 10 100 1000 10000 10 -10 10 -8 10 -6 10 -4 10 -2 0 4 8 12 16 20 axis title 1st line 2nd line 2nd line i gss - gate current (a) v gs - gate-to-source voltage (v) 2nd line t j = 150 c t j = 25 c 10 100 1000 10000 0 20 40 60 80 100 012345 axis title 1st line 2nd line 2nd line i d - drain current (a) v gs - gate-to-source voltage (v) 2nd line t c = 25 c t c =-55 c t c = 125 c 10 100 1000 10000 0 1600 3200 4800 6400 8000 0 6 12 18 24 30 axis title 1st line 2nd line 2nd line c - capacitance (pf) v ds - drain-to-source voltage (v) 2nd line c rss c oss c iss
SI7111EDN www.vishay.com vishay siliconix s16-1520-rev. a, 01-aug-16 4 document number: 67807 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) gate char g e source-drain diode forward volta g e on-resistance vs. gate-to-source volta g e on-resistance vs. junction temperature threshold volta g e sin g le pulse power, junction-to-ambient 10 100 1000 10000 0 0.9 1.8 2.7 3.6 4.5 0 1224364860 axis title 1st line 2nd line 2nd line v gs - gate-to-source voltage (v) q g - total gate charge (nc) 2nd line v ds = 20 v v ds = 15 v v ds = 10 v i d = 10 a 10 100 1000 10000 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 axis title 1st line 2nd line 2nd line i s - source current (a) v sd - source-to-drain voltage (v) 2nd line t j = 150 c t j = 25 c 10 100 1000 10000 0 0.01 0.02 0.03 0.04 0.05 012345 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () v gs - gate-to-source voltage (v) 2nd line t j = 25 c t j = 125 c i d = 10 a 10 100 1000 10000 0.6 0.8 1.0 1.2 1.4 1.6 -50-25 0 255075100125150 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance (normalized) t j - junction temperature (c) 2nd line i d = 10 a v gs = 4.5 v v gs = 2.5 v 10 100 1000 10000 -0.4 -0.2 0 0.2 0.4 0.6 -50-25 0 255075100125150 axis title 1st line 2nd line 2nd line v gs(th) - variance (v) t j - temperature (c) 2nd line i d = 5 ma i d = 250 a 10 100 1000 10000 0 20 40 60 80 100 120 0.001 0.01 0.1 1 10 axis title 1st line 2nd line 2nd line power (w) time (s) 2nd line
SI7111EDN www.vishay.com vishay siliconix s16-1520-rev. a, 01-aug-16 5 document number: 67807 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) safe operatin g area, junction-to-ambient current deratin g a power, junction-to-case power, junction-to-ambient note a. the power dissipation p d is based on t j max. = 150 c, using junction-to-ca se thermal resistance, and is mo re useful in se ttling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the cu rrent rating, when this rating falls below the package limit. 10 100 1000 10000 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) (1) v gs > minimum v gs at which r ds(on) is specified i dm limited limited by r ds(on) (1) t a = 25 c single pulse bvdss limited 100 ms 10 ms 1 ms 100 s 10 s dc 1s i d limited 10 100 1000 10000 0 14 28 42 56 70 0255075100125150 axis title 1st line 2nd line 2nd line i d - drain current (a) t c - case temperature (c) 2nd line 10 100 1000 10000 0 13 26 39 52 65 0255075100125150 axis title 1st line 2nd line 2nd line power (w) t c - case temperature (c) 2nd line 10 100 1000 10000 0 0.4 0.8 1.2 1.6 2.0 0 255075100125150 axis title 1st line 2nd line 2nd line power (w) t a - ambient temperature (c) 2nd line
SI7111EDN www.vishay.com vishay siliconix s16-1520-rev. a, 01-aug-16 6 document number: 67807 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67807 . 10 100 1000 10000 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 axis title 1st line 2nd line normalized effective transient thermal impedance square wave pulse duration (s) 2nd line 0.1 0.05 0.02 single pulse duty cycle = 0.5 0.2 p dm t 1 t 2 1. duty cycle, d = 2. per unit base = r thja = 81 c/w 3. t jm -t a = p dm z thja (t) 4. surface mounted t 1 t 2 notes: 10 100 1000 10000 0.1 1 0.0001 0.001 0.01 0.1 1 10 axis title 1st line 2nd line normalized effective transient thermal impedance square wave pulse duration (s) 2nd line 0.1 0.05 0.02 single pulse duty cycle = 0.5 0.2
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